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31.
在有效质量近似理论下,利用转移矩阵和有效垒高方法研究了有限磁场下含结构缺陷的多组分超晶格中局域电子态的性质.在考虑各组分层有效质量的失配时,外加磁场会导致磁耦合效应的出现.磁耦合效应不仅引起局域电子能级的量子化,并且随着朗道指数或磁场强弱的变化,局域能级及其局域程度都会发生显著移动,特别是对高能区域的局域电子态影响更大.此外,还计算了电子输运系数,讨论了含结构缺陷的三组分超晶格中局域电子能级与输运谱透射禁区中的共振透射峰的关系,发现两者之间有着很好的对应关系,为相应的实验研究提供了依据.
关键词:
超晶格
局域电子态
磁场 相似文献
32.
利用密度泛函理论研究了Al12N和Al12B团簇的原子结构和电子性质,通过各种异构体的比较,发现两种掺杂团簇的最低能量结构都是完好的二十面体(Ih)结构,N(B)原子占据在二十面体的中心.高对称性团簇形成稀疏离散的电子态密度和大的电子能隙.在Al-N之间发生较大的电荷转移.因此我们建议把Al12N团簇看作是碱金属超原子,Al12B团簇看作是卤素超原子,用来构造团簇组装固体. 相似文献
33.
Summary An attempt is made to explain the masses of Z and W± bosons by means of a screening mechanism analogous to charge screening in metals. It considers the effect of the electroweak
force on the distribution of negativekinetic-energy neutrinos, which fills the whole universe (neutrino Fermi sea). The large
weak-boson masses appear to be a direct consequence of the vanishing neutrino mass. 相似文献
34.
35.
Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO2 interface after sub-keV Ar+ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO2, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress. 相似文献
36.
Michelle J. S. Spencer Andrew Hung Ian K. Snook Irene Yarovsky 《Surface science》2003,540(2-3):420-430
The adsorption of atomic S on the Fe(1 1 0) surface is examined using density functional theory (DFT). Three different adsorption sites are considered, including the atop, hollow and bridge sites and the S is adsorbed at a quarter monolayer coverage in a p(2 × 2) arrangement. The hollow site is found to be the most stable, followed by the bridge and atop sites. At all three sites, S adsorption results in relatively minor surface reconstruction, with the most significant being that for the hollow site, with lateral displacements of 0.09 Å. Comparisons between S-adsorbed and pure Fe surfaces revealed reductions in the magnetic moments of surface-layer Fe atoms in the vicinity of the S. At the hollow site, the presence of S causes an increase in the surface Fe d-orbital density of states between 4 and 5 eV. However, S adsorption has no significant effect on the structure and magnetic properties of the lower substrate layers. 相似文献
37.
In this paper, we study the electronic band structure and the ferromagnetic properties of the organic radicalp-NPNN by employing density-functional theory with generalized gradient approximation (GGA) and local-spin densityapproximation (LSDA). The density of states, the total energy, and the spin magnetic moment are calculated. Thecalculations reveal that the δ-phase of p-NPNN has a stable ferromagnetic ground state. It is found that an unpairedelectron in this compound is localized in a single occupied molecular orbital (SOMO) constituted primarily of π* (NO)orbitals, and the main contribution of the spin magnetic moment comes from the π* (NO) orbitals. By comparison, wefind that the GGA is more suitable to describe free radical systems than LSDA. 相似文献
38.
39.
Stereoselectivity in the intermolecular Pauson-Khand reaction of electron-deficient terminal alkynes
A family of terminal alkyne dicobalthexacarbonyl complexes bearing groups with a range of electron-withdrawing abilities has been synthesized. After submitting these complexes to the intermolecular Pauson-Khand reaction with norbornadiene, electron-deficient substrates afforded up to 26% of the unexpected endo-cyclopentenone. 相似文献
40.
Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities. 相似文献